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Photocurrent diffusion length in disordered GaN
in The diffusion length of carriers in semiconductors is a significant parameter determining the suitability of a material for device applications. Here we describe a simple new technique to measure diffusion length and apply it to a study of two types of disordered GaN. We find the diffusion length ... -
Paramagnetic Tunneling Systems and Their Contribution to the Polarization Echo in Glasses
in Author(s): A. Borisenko and G. JugStartling magnetic effects on the spontaneous polarization echo in some silicate glasses at low and ultralow temperatures have been reported in the last decade or so. Though some progress in search of an explanation has been made by considering the nuclear quadrupole dephasing ... -
Photon-Assisted Tunneling in a Biased Strongly Correlated Bose Gas
in Author(s): Ruichao Ma, M. Eric Tai, Philipp M. Preiss, Waseem S. Bakr, Jonathan Simon, and Markus GreinerWe study the impact of coherently generated lattice photons on an atomic Mott insulator subjected to a uniform force. Analogous to an array of tunnel-coupled and biased quantum dots, we observe sharp, ... -
Defect-trapped electrons and ferromagnetic exchange in ZnO
in Author(s): Aurab Chakrabarty and Charles H. PattersonA model for ferromagnetism observed at ambient temperature in films of oxides such as ZnO is proposed and evaluated. The ferromagnetic moment in the model arises from electrons trapped at negatively charged vacancies in an n-type oxide. These vacancies are capable of ...
